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DMN4800LSSQ-13 N-Channel 30 V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO

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Shenzhen Xinyuanpeng Technology Co., Ltd.

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DMN4800LSSQ-13 N-Channel 30 V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO

Brand Name : Diodes Incorporated

Model Number : DMN4800LSSQ-13

Place of Origin : USA

MOQ : 2500

Price : negotiations

Payment Terms : T/T

Supply Ability : 7500

Packaging Details : Tape Reel (TR)

Certification : RoHS

Delivery Time : 5-8 work days

model : DMN4800LSSQ-13

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 8.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 14mOhm @ 9A, 10V

Power Dissipation (Max) : 1.46W (Ta)

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DMN4800LSSQ-13 N-Channel 30 V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant

 Halogen and Antimony Free. “Green” Device

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See Diagram

 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.072g (Approximate)

Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 5 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	798 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.46W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

ORIGINAL

Our company ensures that each batch of products comes from the original factory, and can provide original labels and professional testing agency reports.

PRICE

We provide a variety of quotation channels, and sign the order contract after negotiation.

TRANSACTION

After communication and agreement, we will guide you to arrange payment.

DELIVERY CYCLE

Delivery on the same day, generally 5-12 working days, may be slightly delayed during the epidemic, we will follow up the whole process.

TRANSPORT

We will choose the appropriate transportation mode according to your country.

PACKAGING

After communication with you, we will choose the appropriate packaging method according to the weight of the goods to ensure the safe delivery of the goods.

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